Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization

ABSTRACT

A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by Fe w Co x Ni y V z  in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm 2  is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO 4  which is the V source. The resulting magnetic layer has a magnetic saturation flux density B s  greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

FIELD OF THE INVENTION

The invention relates to a magnetic write head and to a method formaking the same and in particular to a magnetic layer with highresistivity and high magnetic flux density for high frequency operationsthat can serve as a pole layer in an inductive write head.

BACKGROUND OF THE INVENTION

A magnetic disk drive includes a rotating magnetic disk with circulardata tracks and magnetic read and write elements in which a write headis typically aligned with (or to) a read head on a slider. During arecording operation, the slider positions the read head and write headwhich are suspended over the magnetic disk on an air bearing surface(ABS). The write head has bottom and top pole layers that are connectedat a back gap region. The bottom and top pole layers each have pole tipsthat are separated by a write gap layer and terminate at the ABS. In amerged read-write head configuration, the bottom pole also serves as thesecond shield layer in the read head. An electric current is passedthrough coils formed around the back gap region to magnetize the bottomand top pole layers. Referring to FIG. 1, a portion of a conventionalwrite head is shown that includes a bottom pole layer 1, a middle writegap layer 2, and a top pole layer 3 formed along an ABS plane. Thebottom pole layer 1 has a pole tip 4 and the top pole layer 3 has a poletip 5 at the ABS plane,. Applying a current to nearby coils (not shown)produces a magnetic flux 6 that passes through the top pole layer 3 andis concentrated at the write gap side of the top pole tip 5. As thewrite element of the head is moved over a magnetic disk (not shown), themagnetic flux 6 passes from the top pole tip onto a data track and thento the bottom pole tip and is called the gap field. A small flank field7 is also produced which is minimized to avoid overwriting adjacent datatracks. The rate of writing data to the data track is referred to asrecording frequency. Recording density may be increased by decreasingthe size of the track width which is defined by the width of the toppole tip in the write head.

A trend in the industry is to increase the recording density andrecording frequency which requires a higher saturation magnetic fluxdensity (B_(s)) and higher resistivity (ρ) in the top pole layer thanprovided by conventional write heads. A low coercivity (H_(c)) is alsodesirable. A high resistivity is needed to reduce eddy current loss athigh frequencies while a higher B_(s) value in a pole layer enableshigher recording density and prevents saturation of the pole tips.Unfortunately, electroplated FeCo or FeCoNi films that are generallyused in the industry as top and bottom pole layers in a write head havea high B_(s) value but a relatively low resistivity of less than 20μohms-cm which limits the high frequency application of the films inmagnetic recording heads. On the other hand, when an alternative filmthat has a high resistivity is employed as the top pole layer, the filmusually has an unacceptably low B_(s) value. Thus, it is desirable toimplement a novel magnetic layer that has a B_(s) value of at least 1.9Telsa (T) and a resistivity of greater than 70 μohms-cm in order tosimultaneously achieve high recording frequencies of greater than about600 MHz and recording densities higher than 10 Gbit/in².

Although magnetic layers in read and write heads may be deposited by asputtering method, an electrodeposition technique otherwise known as anelectroplating process is usually preferred because the sputteringprocess produces a magnetic layer with a large magnetocrystallineanisotropy and higher internal stress. Electroplating is capable ofgenerating a magnetic layer with a smaller crystal grain size and asmoother surface that leads to a high B_(s) value and low coercive force(H_(c) ). In an electroplating process, an electric current is passedthrough an electroplating cell comprised of a cathode, anode, and anaqueous electrolyte solution of positive ions of the metals to be platedon a substrate (cathode). The anode may have the same composition as themetal being plated. The substrate typically has an uppermost seed layeron which a photoresist layer is patterned to provide openings over theseed layer that define the shape of the metal layer to be plated. Oncethe metal layer is deposited, the photoresist layer and underlying seedlayer are removed. The magnetic layers which become a bottom pole andtop pole layer in a write head may be formed in this manner.

U.S. Pat. No. 6,538,845, a high specific resistance layer is formed on asoft magnetic top pole layer in a write head to allow higher recordingfrequencies and higher recording densities. However, the high specificresistance layer requires a protective layer to prevent cracking whichincreases the complexity of the fabrication process and is likely todrive up production cost.

A laminated pole layer is provided in U.S. Pat. No. 6,233,116 and iscomprised of alternating layers of FeXN such as FeRhN having a highmagnetic moment and an amorphous alloy that is Co based with a highresistivity. Flux may travel along or across laminating layers which aredeposited by a sputtering technique.

In U.S. Pat. No. 6,682,826 and related U.S. patent application2004/0023074, a Fe alloy that may be FeCoV with a Fe content of at least60 atomic % is used as a soft magnetic undercoat film in a recordingmedium. Similarly, in related U.S. Pat. No. 6,677,061, a FeCoVNiN alloywith at least 5 atomic % V is disclosed as a soft magnetic undercoatfilm and FeCoV as a magnetization stabilizing film in a recordingmedium. Although a high B_(s) value is mentioned, the cited referencesdo not teach a high B_(s) in combination with a high resistivity forpole layer applications in a write head.

A main pole comprised of FeCoNi is plated on a NiV seed layer in U.S.patent application 2003/0189786. A non-magnetic seed layer is chosen topromote a low coercivity and the desired resistivity in the main pole ofa perpendicular writer.

SUMMARY OF THE INVENTION

One objective of the present invention is to provide a magnetic layerthat can serve as a top and bottom pole layer in a magnetic write headand which has a resistivity ρ of greater than 70 μohms-cm and a magneticsaturation flux density that is above 1.9 T.

A further objective of the present invention is to provide a method offorming the improved magnetic layer according to the first embodimentwhich can easily be implemented in a magnetic head fabrication process.

According to the first aspect of the present invention, a magnetic writehead is disclosed that includes a bottom pole layer formed on asubstrate, a write gap layer on the bottom pole layer, and a top polelayer on the write gap wherein the aforementioned layers each have anend formed along an ABS plane. In one embodiment, the bottom pole layeris comprised of a soft magnetic material such as CoFe, NiFe, CoNiFe, orFeCoN and the write gap layer is a non-magnetic material that is Al₂O₃,silicon oxide, or NiCu, for example. An important feature is that thetop pole layer has a composition represented by Fe_(w)Co_(x)Ni_(y)V_(z)in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V,respectively, and where w is between 60 and 85, x is between 10 and 30,y is between 0 and 20, z is between about 0.1 and 3, and whereinw+x+y+z=100. Preferably, w is between about 70 and 80, x is from about10 to 20, y is from about 3 to 5, and z is between about 0.1 and 2. As aresult, the top pole layer has a B_(s) value above 1.9 T (19 kG) and aresistivity (ρ) greater than 70 μohms-cm. In one embodiment, y=0, andthe top pole layer is comprised of a FeCoV alloy. In an alternativeembodiment, the bottom pole layer also has a composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between 60 and 85, x isbetween 10 and 30, y is between 0 and 20, z is between about 0.1 and 3,and wherein w+x+y+z=100.

According to a second aspect of the present invention, a method isprovided for forming the magnetic write head comprised of sequentiallyforming a bottom pole layer, a write gap layer, and a top pole layer ona substrate and along an ABS plane. In one embodiment, a seed layer suchas NiFe is deposited on the substrate. A photoresist layer is thenpatterned on the seed layer to form an opening with the shape of abottom pole layer that is to be subsequently deposited. Anelectroplating process is performed to deposit a bottom pole layerwithin the opening. The bottom pole layer may be comprised of a softmagnetic material such as CoFe, NiFe, CoNiFe, or FeCoN.

Optionally, an electroplating process is performed that deposits amagnetic layer having the composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between 60 and 85, x isbetween 10 and 30, y is between 0 and 20, z is between about 0.1 and 3,and wherein w+x+y+z=100. The Fe_(w)Co_(x)Ni_(y)V_(z) composition isachieved by adding Ni⁺², Co⁺², and Fe²⁺ions as well as VOSO₄ to anaqueous electroplating solution comprised of other additives in anelectroplating cell that has a Co or Ni anode and the substrate as thecathode. The electroplating solution is maintained between 10° C. and40° C. while a plating current having a density of 3 to 30 mA/cm² isapplied. The bottom pole layer may be magnetically aligned by applyingan external magnetic field parallel to the plane of the substrate duringthe electroplating process or after the resulting magnetic layer hasbeen removed from the electroplating cell. Furthermore, an anneal stepmay be used after the electroplating process and optionally with themagnetic alignment step.

After the photoresist layer is removed, a write gap layer is depositedby a conventional process and is planarized. Next, a second seed layeris preferably deposited on the write gap layer and a second photoresistlayer is patterned on the second seed layer to form an opening thatdefines the shape of a subsequently deposited top pole layer. Anelectroplating process as previously described is performed to deposit atop pole layer having the composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between 60 and 85, x isbetween 10 and 30, y is between 0 and 20, z is between about 0.1 and 3,and wherein w+x+y+z=100. The second photoresist layer is removed and thewrite head fabrication process may be concluded by forming an overcoatdielectric layer on the top pole layer and above the write gap layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view that depicts a portion of aconventional write head and the path of magnetic flux through a top polelayer to a bottom pole layer.

FIG. 2 is a cross-sectional view that depicts the formation of aseparated read-write head in which an opening is formed in a patternedphotoresist above a write gap layer to define the shape of a top poleaccording to one embodiment of the present invention.

FIG. 3 is a cross-sectional view from the ABS plane of the partiallyformed read-write head in FIG. 2 after a top pole layer is electroplatedwithin the opening according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view of the read-write head in FIG. 3 afterthe photoresist layer and underlying seed layer are removed, a notchunderneath the top pole tip region is created in the bottom pole layer,and an overcoat dielectric layer is deposited.

FIG. 5 is a cross-sectional view from the ABS plane of a separatedread-write head in which a bottom pole layer is plated on a seed layerand a photoresist pattern is formed on a second seed layer above a writegap layer according to a second embodiment of the present invention.

FIG. 6 is a cross-sectional view of the partially formed read-write headin FIG. 5 after a top pole layer is electroplated in the opening withinthe photoresist pattern.

FIG. 7 is a cross-sectional view of the read-write head structure inFIG. 6 after the photoresist layer and underlying seed layer areremoved, a notch underneath the top pole layer is created in the bottompole layer, and an overcoat dielectric layer is deposited.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is a magnetic layer in a write head that can serveas a top pole layer and a bottom pole layer and which has a highsaturation magnetic flux density and a high resistivity to enable highfrequency recording operations. The drawings are provided by way ofexample and are not intended to limit the scope of the invention.Although a separated read-write head structure is shown, those skilledin the art will appreciate that the magnetic layer disclosed herein maybe incorporated in other write head structures used in the industry.Moreover, the write head may be a planar top pole writer, a stitched toppole writer, or a perpendicular recording head. The present invention isalso a method of forming the novel magnetic layer by an electroplatingprocess.

The inventors have discovered that a magnetic layer comprised of about60 to 85 atomic % iron, about 10 to 30 atomic % cobalt, 0 to about 20atomic % nickel, and about 0.1 to 3 atomic % vanadium possesses thedesired combination of a high saturation magnetic flux density above 1.9T and a resistivity greater than 70 μohm-cm.

A first embodiment is depicted in FIGS. 2-4 and relates to a method offabricating the magnetic layer of the present invention which is the toppole layer in a write head. The write head is shown as part of aseparated read-write head structure but is not limited thereto.Referring to FIG. 2, a partially formed read-write head 10 that is partof a magnetic disk drive is shown as viewed from the plane of an ABS.

The read head portion of the read-write head 10 is comprised of asubstrate 11 that may be a ceramic such as AlTiC. The substrate 11 has atop surface 12 that is perpendicular to the ABS. A first shield layer 13is formed on the substrate 11. Above the first shield layer 13 issequentially formed a first insulation layer 14 and a second insulationlayer 16 with a sensor element 15 formed therein along an interfacebetween the first and second insulation layers which are made of Al₂O₃or silicon oxide, for example. The sensor element 15 is preferably basedon a giant magnetoresistive (GMR) configuration comprised of a pinnedlayer, an anti-ferromagnetic (AFM) layer, and a free layer (not shown).Above the second insulation layer 16 is a second shield layer 17 whichforms the top layer in the read head. The read head portion of theread-write head 10 is formed by conventional methods that are notdescribed herein.

The bottom pole layer 19 in the write head is separated from the secondshield layer 17 by a thin Al₂O₃ layer 18. In this embodiment, the bottompole layer 19 is formed by an electroplating or sputtering method and iscomprised of a magnetic material such as CoFe, NiFe, CoNiFe, or FeCoNwith a thickness of about 3 to 6 microns. It is understood that theformation of the bottom pole layer 19 may involve depositing a seedlayer (not shown) and patterning a photoresist layer (not shown) beforeelectroplating the bottom pole layer within an opening in thephotoresist layer. In this case, the photoresist layer and underlyingseed layer are removed before the write gap layer is deposited. A writegap layer 20 comprised of a non-magnetic material such as Al₂O₃, siliconoxide, or NiCu is formed on the bottom pole layer 19 and has a thicknessbetween 0.5 and 3 microns. When an oxide is employed as the write gaplayer 20, the oxide may be deposited by a plasma enhanced chemical vapordeposition (PECVD) or a physical vapor deposition (PVD) process.

Preferably, a seed layer 21 with a thickness of about 0.05 to 0.4microns is deposited on the write gap layer 20 by a PVD, sputtering, orionic metal plasma (IMP) method. The seed layer 21 may be comprised ofNiFe, CoFeN, or CoFe. Alternatively, the seed layer has the samecomposition as the subsequently deposited top pole layer. The seed layer21 serves to promote the deposition of a top pole layer in anelectroplating process which will be explained in a later section. Aphotoresist layer 22 is patterned on the seed layer to generate anopening 23 having a width w at the ABS that defines the shape of a poletip region in the top pole layer of the write head. Those skilled in theart will appreciate that the pole tip region having a width w typicallyextends less than a micron toward the back end of the write head andthat from a top view (not shown) the opening 23 also defines the shapeof the remainder of the top pole layer that may extend a distance of upto 25 microns or more from the ABS and has a width substantially greaterthan w. The thickness of the photoresist layer 22 is about 1 to 5microns.

Referring to FIG. 3, a key step in the method of the first embodiment isan electroplating process that deposits a top pole layer 24 whichpreferably has a composition represented by Fe_(w)Co_(x)Ni_(y)V_(z) inwhich w, x, y, and z are the atomic % of Fe, Co, Ni, and V,respectively, and where w is between 60 and 85, x is between 10 and 30,y is between 0 and 20, z is between about 0.1 and 3, and whereinw+x+y+z=100. More preferably, w is from 70 to 80, x is between 10 and20, y is between 3 and 5, and z is between 0.1 and 2. Note that thethickness of the top pole layer 24 does not exceed the thickness of thephotoresist layer 22 and is preferably in a range of about 0.3 to 4.0microns. In one embodiment, y=0 and a FeCoV alloy is formed.Alternatively, a FeCoNiV alloy is formed as the top pole layer.

The inventors have discovered that a FeCoNiV alloy with theaforementioned composition may be formed by an electroplating processthat involves immersing the read-write head 10 in an electrolytesolution contained within an electrochemical cell comprised of an anodewhich is preferably Co or Ni. The read-write head and specifically theexposed portions of the seed layer 21 within the opening 23 become thecathode during the electroplating process. The electrolyte solution isan aqueous solution having a pH between 2.0 and 4.0 and includes Fe⁺²ions, Co⁺² ions, Ni⁺² ions, and VO⁺² ions which are provided by addingthe following metal salts at the indicated concentrations in grams perliter: FeSO₄.7H₂O (30 to 70 g/L); CoSO₄.7H₂O (10-40 g/L); NiSO₄.6H₂O (0to 40 g/L); NiCl₂.6H₂O (0 to 10 g/L); and VOSO₄.xH₂O (0.02 to 10 g/L).Additionally, the electrolyte solution is comprised of other additivesand supporting electrolytes including but not limited to H₃BO₃ with aconcentration of 26 to 27 g/L, NH₄Cl at a concentration of 0 to 20 g/L,(NH₄)₂SO₄ at a concentration of 0 to 30 g/L, sodium saccharin at aconcentration of 0 to 2.0 g/L, and sodium lauryl sulfate at aconcentration of 0.01 to 0.15 g/L. Optionally, if a FeCoV alloy isdesired as the top pole layer 24, the NiCl₂.6H₂O and NiSO₄.6H₂O saltsare excluded from the electrolyte solution and the anode is preferablyCo. Preferably, the electroplating is performed with an electrolytesolution temperature between 10° C. and 40° C. and with a platingcurrent density of from 3 to 30 mA/cm². Using these conditions, the toppole layer 24 is deposited at the rate of about 50 to 700 Angstroms perminute on the exposed portions of the seed layer 21. It is understoodthat the electrolyte solution may be mechanically agitated during theelectroplating process. Furthermore, either a direct current (DC) orpulsed DC mode may be used with a duty ratio of about 0.4 to 0.6 and acycle time of about 100 ms.

In one embodiment, the top pole layer 24 is magnetically aligned duringthe electroplating process by applying an external magnetic field H ofabout 2000 gauss in a direction parallel to the ABS plane and parallelto the top surface 12 of the substrate. This step helps to impart thedesired magnetic properties in the top pole layer 24. The presentinvention also encompasses a thermal anneal step after the top polelayer 24 is magnetically aligned and the substrate 11 is removed fromthe electroplating solution. Optionally, the top pole layer 24 ismagnetically aligned following the electroplating process and after thesubstrate 11 is removed from the electrolyte solution by applying amagnetic field H as described previously. In this case, a thermal annealstep may be performed simultaneously with the application of a magneticfield H.

The resulting top pole layer following the magnetic alignment andoptional anneal step has been characterized and found to have acomposition represented by Fe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, andz are the atomic % of Fe, Co, Ni, and V, respectively, and where w isbetween 60 and 85, x is between 10 and 30, y is between 0 and 20, z isbetween about 0.1 and 3, and wherein w+x+y+z=100. TheFe_(w)Co_(x)Ni_(y)V_(z) alloy according to the present invention hasbeen further characterized and found to have a saturation magnetic fluxdensity B_(s) of greater than 1.9 T and an electrical resistivity ρ ofgreater than 70 μohm-cm. The B_(s) and resistivity values are higherthan what has been achieved simultaneously in a magnetic layer of aprior art write head. Thus, the write head of the present invention iscapable of higher recording frequencies than is possible withconventional write heads. In a Fe_(w)Co_(x)Ni_(y)V_(z) alloy where w isbetween 70 and 80, x is between 10 and 20, y is between 3 and 5, z isbetween 0.1 and 2, and w+x+y+z=100, a magnetic layer thereof formedaccording to a method of the present invention has an easy axis coercivefield (H_(c) ) of less than 20 Oe and an anisotropy field (H_(K)) ofless than 30 Oe. The inventors have found that a Fe content above 85atomic % leads to a large grain size that lowers performance while a Fecontent below 60 atomic % reduces the Bs value. A V content above 3atomic % reduces the Bs value while a V content below 0.1% results in nosignificant increase in resistivity.

Referring to FIG. 4, the photoresist layer 22 is removed by aconventional method such as a wet stripper or an oxygen ash process. Thetop pole layer 24 which has a width w then serves as an etch mask whilethe seed layer 21 and the write gap layer 20 not covered by the top polelayer are removed by an ion beam etch (IBE) known to those skilled inthe art. The IBE process also trims the tip of the top pole layer 24 toa width w₁ and continues into the bottom pole layer 19 to remove aportion thereof. A notch 25 and a new top surface 19 a are created byremoving a thickness d from the top portion of the bottom pole layer 19not covered by the top pole layer 24. The thickness d is preferablyabout 2 to 5 times greater than the write gap layer thickness. The widthw₁ of the top pole layer 24 which is about 0.2 to 0.4 microns willdefine the track width of the write head which moves in a direction 27during a write operation. The vertical sidewalls of the notch 25coincide with the sides of the top pole layer 24, seed layer 21, andwrite gap layer 20. Once the IBE process that forms a notch 25 in thebottom pole layer 19 is completed, an overcoat layer 26 is deposited onthe top pole layer 24 and on the top surface 19 a of the bottom polelayer. The overcoat layer 26 is typically an oxide such as Al₂O₃ orsilicon oxide which is deposited by a PECVD or PVD method. At thispoint, the write head portion of the read-write head 10 is essentiallycomplete. A planarization process (not shown) may be used to form asmooth top surface on the overcoat layer 26. It is understood that thewrite head is comprised of other elements such as a coil layer andadditional dielectric layers which are formed by conventional methodsknown to those skilled in the art but which are not shown in across-sectional view from the ABS plane in FIG. 4.

Those skilled in the art will recognize that the method of forming themagnetic layer of the present invention can be easily implemented in thefabrication of a read-write head since the required materials andequipment are readily available and in most cases are already used forother processes. In particular, the electroplating process for forming aFeCoV or FeCoNiV alloy according to the present invention is readilyaccomplished by the addition of VO⁺² ions to an existing electrolytesolution.

In a second embodiment illustrated in FIGS. 5-7, the magnetic layeraccording to the present invention is used as a bottom pole layer and atop pole layer in a write head. Although a separated read-write headstructure is shown, the write head is not limited thereto. A method offorming the magnetic layer of the present invention will now bedescribed.

Referring to FIG. 5, a cross-sectional view from an ABS is shown of aread-write head 30 which is comprised of a substrate 31 that may be aceramic such as AlTiC. The substrate 31 has a top surface 32 that isperpendicular to the ABS. A first shield layer 33 is formed on thesubstrate 31. Above the first shield layer 33 is sequentially formed afirst insulation layer 34 and a second insulation layer 36 with a sensorelement 35 formed therein along an interface between the first andsecond insulation layers. The sensor element 35 is preferably based on agiant magnetoresistive (GMR) configuration comprised of a pinned layer,an anti-ferromagnetic (AFM) layer, and a free layer as appreciated bythose skilled in the art. There is typically a hard bias layer (notshown) on each side of the sensor element which provides a longitudinalbias to influence the magnetic direction of the free layer along an axisparallel to the ABS and parallel to the top surface 32 of the substrate.A second shield layer 37 is formed by sputter depositing a seed layer(not shown) on the second insulation layer 36 and then electroplatingthe second shield layer on the seed layer to complete the formation ofthe read head portion of the read-write head 30. Then an Al₂O₃ layer 38is formed on the second shield layer to separate the read portion from asubsequently formed write portion of the read-write head.

The write head is fabricated by depositing a first seed layer 39 with athickness of about 0.05 to 0.4 microns on the Al₂O₃ layer 38 by a PVD,sputtering, or IMP method. The first seed layer 39 may be comprised ofNiFe, CoFeN, or CoFe. Alternatively, the seed layer has the samecomposition as the subsequently deposited bottom pole layer. The firstseed layer 39 serves to promote the deposition of a bottom pole layerduring an electroplating process.

A photoresist layer (not shown) is patterned on the first seed layer 39to form an opening that defines the shape of the bottom pole layer. Thenthe bottom pole layer 40 of the write head is preferably depositedwithin the opening by an electroplating technique and has an as-platedthickness of about 3 to 6 microns. Preferably, the bottom pole layer 40has a composition represented by Fe_(w)Co_(x)Ni_(y)V_(z) in which w, x,y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and wherew is between 60 and 85, x is between 10 and 30, y is between 0 and 20, zis between about 0.1 and 3, and wherein w+x+y+z=100. More preferably, wis from 70 to 80, x is between 10 and 20, y is between 3 and 5, and z isfrom about 0.1 to 2. Optionally, y=0 and a FeCoV alloy is formed.

The inventors have discovered that a FeCoNiV or FeCoV alloy with theaforementioned composition may be formed by an electroplating processthat involves immersing said read-write head 30 in an electrolytesolution contained within an electrochemical cell comprised of an anodewhich is preferably Go or Ni. The read-write head and specifically theexposed portion of the first seed layer 39 becomes the cathode duringthe electroplating process. The electrolyte solution is an aqueoussolution having a pH between 2.0 and 4.0 and includes Fe⁺² ions, Co⁺²ions, Ni⁺² ions, and VO⁺² ions which are provided by adding thefollowing salts at the indicated concentrations: FeSO₄.7H₂O (30 to 70g/L); CoSO₄.7H₂O (10-40 g/L); NiSO₄.6H₂O (0 to 40 g/L); NiCl₂.6H₂O (0 to10 g/L); and VOSO₄.xH2O (0.02 to 3.0 g/L). Additionally, the electrolytesolution is comprised of other additives and supporting electrolytesincluding but not limited to H₃BO₃ with a concentration of 26 to 27 g/L,NH₄Cl at a concentration of 0 to 20 g/L, (NH₄)₂SO₄ at a concentration of0 to 30 g/L, sodium saccharin at a concentration of 0 to 2.0 g/L, andsodium lauryl sulfate at a concentration of 0.01 to 0.15 g/L. When aFeCoV alloy is desired as the bottom pole layer 40, the NiCl₂.6H₂O andNiSO₄.6H₂O salts are excluded from the electrolyte solution and theanode is preferably Co. Preferably, the electroplating is performed withan electrolyte solution temperature between 10° C. and 40° C. and with aplating current density from 3 to 30 mA/cm. Using these conditions, thebottom pole layer 38 is deposited at the rate of about 50 to 700Angstroms per minute on the exposed portions of the seed layer 39.

In one embodiment, the bottom pole layer 40 is magnetically alignedduring the electroplating process by applying an external magnetic fieldin a direction parallel to the ABS plane and parallel to the top surface32 of the substrate. This step helps to impart the desired magneticproperties in the bottom pole layer 40. The present invention alsoencompasses a thermal anneal step after the bottom pole layer 40 ismagnetically aligned and the substrate 31 is removed from theelectroplating solution. Optionally, the bottom pole layer 40 ismagnetically aligned following the electroplating process and after thesubstrate 31 is removed from the electrolyte solution by applying amagnetic field as described previously. In this case, a thermal annealstep may be performed simultaneously with the application of a magneticfield.

Following the electroplating step to form the bottom pole layer 40, thephotoresist layer is removed by a wet stripper or an ashing process. Thebottom pole layer 40 then serves as an etch mask while the first seedlayer 39 not covered by the bottom pole layer is removed by an IBEprocess. Next, a write gap layer 41 comprised of a non-magnetic materialsuch as Al₂O₃, silicon oxide, or NiCu is formed on the bottom pole layer40 and has a thickness between 0.5 and 3 microns. When an oxide isemployed as the write gap layer 41, the oxide may be deposited by aPECVD or PVD process.

A second seed layer 42 with a thickness of about 0.05 to 0.4 microns isthen deposited on the write gap layer by a PVD, IMP, or sputter processand may be selected from the same group of materials as described forthe first seed layer 39. Alternatively, the second seed layer 42 isformed of the same material that will be used in a subsequentlydeposited top pole layer.

A photoresist layer 43 having a thickness of about 1 to 5 microns ispatterned on the second seed layer 42 to produce an opening 44 having awidth w of about 0.2 to 0.4 microns at the ABS that defines the shape ofa pole tip region in the top pole layer of the write head. Those skilledin the art will appreciate that the pole tip region having a width wtypically extends less than a micron toward the back end of the writehead and that from a top view (not shown) the opening 44 also definesthe shape of the remainder of the top pole layer that may extend adistance of up to 25 microns or more from the ABS and has a widthsubstantially greater than w.

Referring to FIG. 6, an important step in the method of the secondembodiment is an electroplating process that deposits a top pole layer45 which preferably has the same composition as the bottom pole layer40. Note that the thickness of the top pole layer 45 does not exceed thethickness of the photoresist layer 43 and is preferably in a range ofabout 0.3 to 4.0 microns. In one embodiment, y=0 and a FeCoV alloy isformed. Alternatively, a FeCoNiV alloy is formed as the top pole layer45. The top pole layer is preferably formed by the same electroplatingprocess as used to deposit the bottom pole layer 40. Likewise, the toppole layer 45 may be magnetically aligned by applying an externalmagnetic field H of about 2000 Oe during or after the electroplatingstep. Additionally, a thermal anneal step may be performed once theread-write head 30 is removed from the electroplating solution. In thiscase, the anneal step may occur simultaneously with the magneticalignment by an external magnetic field H. Note that the electroplatingprocess used to deposit the top pole layer 45 and bottom pole layer 40may be performed in a single wafer mode or in a batch process. A DC orpulsed DC current may be employed as described previously.

The resulting bottom and top pole layers 40, 45, respectively, followingthe magnetic alignment and optional anneal step have been characterizedby XRF and found to have a composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between 60 and 85, x isbetween 10 and 30, y is between 0 and 20, z is between about 0.1 and 3,and wherein w+x+y+z=100. The Fe_(w)Co_(x)Ni_(y)V_(z) alloy according tothe present invention has been further characterized and found to have asaturation magnetic flux density B_(s) of greater than 1.9 T, an easyaxis coercive field H_(c) of less than 20 Oe, an anisotropy field H_(K)less than 30 Oe, and an electrical resistivity ρ of greater than 70μohm-cm. The B_(s) and resistivity values are higher than what has beenachieved simultaneously in a magnetic layer of a prior art write head.Thus, the write head of the present invention is capable of higherrecording frequencies than is possible in conventional write heads.

Referring to FIG. 7, the photoresist layer 43 is removed by aconventional method such as a wet stripper or an oxygen ash process. Thetop pole layer 45 then serves as an etch mask while the second seedlayer 42 and write gap layer 41 not covered by the top pole layer areremoved by an IBE process. The IBE process is continued to remove athickness d about 2 to 5 times greater than the thickness of the writegap layer from the top portion of the bottom pole layer 40 not coveredby the top pole layer 45. As a result, a new top surface 40 a and anotch 46 are formed on the bottom pole layer. The vertical sidewalls ofthe notch extend upward along the sides of the write gap layer 41 andsecond seed layer 42. Moreover, the tip of the top pole layer 45 istrimmed to a width w₁ of about 0.2 to 0.4 microns by the IBE process.The width w₁ defines the track width in the write head. Additionaldielectric layers (not shown) may be formed between the top pole layerand bottom pole layer to insulate a coil layer. After coils (not shown)comprised of copper, for example, are wound around a back gap regionthat connects the top pole layer and bottom pole layer, an overcoatlayer 47 is deposited on the top pole layer 45 and top surface 40 a ofthe bottom pole layer. The overcoat layer 47 is typically an oxide suchas Al₂O₃ or silicon oxide which is deposited by a PECVD or PVD method.At this point, the write head portion of the read-write head 30 isessentially complete. A planarization process may be employed to form asmooth top surface on the overcoat layer 47.

As indicated previously, the magnetic layer of the present invention canbe easily implemented in the fabrication of a read-write head since therequired materials and equipment are readily available and in most casesare already used for other processes. In particular, the electroplatingprocess for forming a FeCoV or FeCoNiV alloy according to the presentinvention is readily accomplished by the addition of VO⁺² ions to anexisting electrolyte solution.

While this invention has been particularly shown and described withreference to, the preferred embodiment thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of this invention.

1. A magnetic layer having an elemental composition, comprising: (a)about 60 to 85 atomic % iron; (b) about 10 to 30 atomic % cobalt; (c) 0to about 20 atomic % nickel; and (d) about 0.1 to 3 atomic % vanadium.2. The magnetic layer of claim 1 wherein said magnetic layer is formedas a top pole layer in a magnetic write head.
 3. The magnetic layer ofclaim 1 wherein said magnetic layer is formed as a top pole layer and asa bottom pole layer in a magnetic write head.
 4. The magnetic layer ofclaim 2 wherein said top pole layer has a thickness of about 0.3 to 4microns.
 5. The magnetic layer of claim 1 wherein the magneticsaturation flux density B_(s) is greater than 1.9 Telsa and theresistivity ρ is higher than 70 μohms-cm.
 6. The magnetic layer of claim1 wherein said magnetic layer has a composition of about 70 to 80 atomic% Fe, about 10 to 20 atomic % Co, about 3 to 5 atomic % Ni, and about0.1 to 2% V and wherein the B_(s) is greater than 1.9 T, ρ is largerthan 70 μohms-cm, the easy axis coercive field (H_(c) ) is less than 20Oe, and the anisotropy field (H_(K)) is less than 30 Oe.
 7. A magneticwrite head, comprising: (a) a bottom pole layer formed on a substrate;(b) a write gap layer on said bottom pole layer; and (c) a top polelayer on said write gap layer wherein said top pole layer has acomposition represented by Fe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, andz are the atomic % of Fe, Co, Ni, and V, respectively, and where w isbetween about 60 and 85, x is between about 10 and 30, y is between 0and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. 8.The magnetic write head of claim 7 wherein the magnetic write head ispart of a separated read-write head structure and the bottom pole layeris formed on an Al₂O₃ layer that separates the write head from the readhead.
 9. The magnetic write head of claim 7 wherein the magnetic writehead is a planar writer, a stitched pole writer, or a perpendicularrecording head.
 10. The magnetic write head of claim 7 wherein thebottom pole layer is comprised of CoFe, NiFe, CoNiFe, or FeCoN with athickness of about 3 to 6 microns.
 11. The magnetic write head of claim7 wherein the bottom pole layer has a composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between about 60 and 85, xis between about 10 and 30, y is between 0 and about 20, z is betweenabout 0.1 and 3, and wherein w+x+y+z=100.
 12. The magnetic write head ofclaim 7 further comprised of a seed layer between said write gap layerand said top pole layer.
 13. The magnetic write head of claim 12 whereinsaid seed layer is comprised of NiFe, CoFeN, or CoFe and has a thicknessof about 0.05 to 0.4 microns.
 14. The magnetic write head of claim 7wherein the top pole layer has a thickness of about 0.3 to 4 microns anda track width of about 0.2 to 0.4 microns.
 15. The magnetic write headof claim 7 wherein the top pole layer has a magnetic saturation fluxdensity B_(s) greater than 1.9 Telsa and a resistivity ρ higher than 70μohms-cm.
 16. The magnetic write head of claim 7 wherein said top polelayer has a composition of about 70 to 80 atomic % Fe, about 10 to 20atomic % Co, about 3 to 5 atomic % Ni, and about 0.1 to 2% V and whereinthe B_(s) is greater than 1.9 T, ρ is larger than 70 μohms-cm, the easyaxis coercive field (H_(c) ) is less than 20 Oe, and the anisotropyfield (H_(K)) is less than 30 Oe.
 17. An electrolyte solution forelectroplating a magnetic layer on a substrate; comprising; (a) anaqueous solution of metal salts comprising: FeSO₄.7H₂O at aconcentration of 30 to 70 g/L; CoSO₄.7H₂O at a concentration of about10-40 g/L; NiSO₄.6H₂O at a concentration of 0 to about 40 g/L;NiCl₂.6H₂O at a concentration of 0 to about 10 g/L; and VOSO₄.xH2O at aconcentration of about 0.02 to 10 g/L; (b) H₃BO₃ at a concentration ofabout 26 to 27 g/L; (c) NH₄Cl at a concentration of 0 to 20 g/L; (d)(NH₄)₂SO₄ at a concentration of 0 to 30 g/L; (e) sodium saccharin at aconcentration of 0 to 2.0 g/L; and (f) sodium lauryl sulfate at aconcentration of 0.01 to 0.15 g/L; wherein said magnetic layer has acomposition represented by Fe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, andz are the atomic % of Fe, Co, Ni, and V, respectively, and where w isbetween about 60 and 85, x is between about 10 and 30, y is between 0and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. 18.The electrolyte solution of claim 17 wherein said electrolyte solutionis part of an electrochemical cell that has an anode comprised of Co orNi and a cathode which is said substrate.
 19. The electrolyte solutionof claim 17 in which a temperature between about 10° C. and 40° C. ismaintained during an electroplating process of said magnetic layer. 20.The electrolyte solution of claim 18 in which a plating current betweenabout 3 to 30 mA/cm² is applied to said electrochemical cell to performan electroplating of said magnetic layer.
 21. The electrolyte solutionof claim 17 in which a pH between about 2 and 4 is maintained during anelectroplating of said magnetic layer.
 22. A method of forming amagnetic layer on a substrate, comprising: (a) providing a substrate;(b) forming a seed layer on said substrate; and (c) electroplating saidmagnetic layer on said seed layer in an electroplating cell wherein saidmagnetic layer has a composition represented by Fe_(w)Co_(x)Ni_(y)V_(z)in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V,respectively, and where w is between about 60 and 85, x is between about10 and 30, y is between 0 and about 20, z is between about 0.1 and 3,and wherein w+x+y+z=100.
 23. The method of claim 22 further comprised ofapplying an external magnetic field to magnetically align said magneticlayer wherein said magnetic field may be applied during or after saidelectroplating step.
 24. The method of claim 22 wherein said magneticlayer forms a bottom pole layer with a thickness of about 3 to 6 micronsin a magnetic write head.
 25. The method of claim 22 wherein saidsubstrate is comprised of a write gap layer formed on a bottom polelayer and said magnetic layer has a thickness of about 0.3 to 4 micronsand forms a top pole layer in a write head.
 26. The method of claim 25wherein said bottom pole layer has a composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between 60 and 85, x isbetween 10 and 30, y is from 0 to about 20, z is between about 0.1 and3, and wherein w+x+y+z=100.
 27. The method of claim 22 wherein said seedlayer is comprised of NiFe, CoFeN, or CoFe and has a thickness of about0.05 to 0.4 microns.
 28. The method of claim 22 wherein saidelectroplating cell is comprised of a cathode which is the seed layer onsaid substrate, an anode, and an electrolyte solution that is maintainedat a temperature between about 10° C. and 40° C. and has a pH betweenabout 2.0 and 4.0.
 29. The method of claim 28 wherein said electrolytesolution is comprised of: (a) an aqueous solution of metal saltscomprising: FeSO₄.7H₂O at a concentration of 30 to 70 g/L; CoSO₄.7H₂O ata concentration of about 10-40 g/L; NiSO₄.6H₂O at a concentration of 0to about 40 g/L; NiCl₂.6H₂O at a concentration of 0 to about 10 g/L; andVOSO₄.xH₂O at a concentration of about 0.02 to 10 g/L; (b) H₃BO₃ at aconcentration of about 26 to 27 g/L; (c) NH₄Cl at a concentration of 0to 20 g/L; (d) (NH₄)₂SO₄ at a concentration of 0 to 30 g/L; (e) sodiumsaccharin at a concentration of 0 to 2.0 g/L; and (f) sodium laurylsulfate at a concentration of 0.01 to 0.15 g/L.
 30. The method of claim22 wherein a plating current with a density of about 3 to 30 mA/cm² isapplied to the electroplating cell during the electroplating step. 31.The method of claim 22 wherein said magnetic layer has a magneticsaturation flux density B_(s) greater than 1.9 Telsa and a resistivity ρhigher than 70 μohms-cm.
 32. The method of claim 22 wherein saidmagnetic layer has a composition of about 70 to 80 atomic % Fe, about 10to 20 atomic % Co, about 3 to 5 atomic % Ni, and about 0.1 to 2% V andwherein the B_(s) is greater than 1.9 T, ρ is larger than 70 μohms-cm,H_(c) is less than 20 Oe, and H_(K) is less than 30 Oe.
 33. A method offorming a magnetic write head, comprising: (a) providing a substrate;(b) forming a bottom pole layer on said substrate; (c) forming a writegap layer on said bottom pole layer; and (d) forming a top pole layer onsaid write gap layer, said top pole layer has a composition representedby Fe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % ofFe, Co, Ni, and V, respectively, and where w is between about 60 and 85,x is between about 10 and 30, y is between 0 and about 20, z is betweenabout 0.1 and 3, and wherein w+x+y+z=100.
 34. The method of claim 33wherein the magnetic write head is part of a separated read-write headand the bottom pole layer is formed on an Al₂O₃ layer that separates thewrite head from the read head.
 35. The method of claim 33 wherein themagnetic write head is a planar writer, a stitched pole writer, or aperpendicular recording head.
 36. The method of claim 33 wherein thebottom pole layer has a composition represented byFe_(w)Co_(x)Ni_(y)V_(z) in which w, x, y, and z are the atomic % of Fe,Co, Ni, and V, respectively, and where w is between about 50 and 80, xis between about 20 and 40, y is between 0 and about 20, z is betweenabout 1 and 3, and wherein w+x+y+z=100.
 37. The method of claim 36further comprised of forming a first seed layer between said substrateand said bottom pole layer and a second seed layer between said writegap layer and said top pole layer.
 38. The method of claim 33 whereinthe top pole layer has a magnetic saturation flux density B_(s) greaterthan 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.
 39. Themethod of claim 33 wherein said top pole layer has a composition ofabout 70 to 80 atomic % Fe, about 10 to 20 atomic % Co, about 3 to 5atomic % Ni, and about 0.1 to 2% V and wherein the B_(s) is greater than1.9 T, ρ is larger than 70 μohms-cm, H_(c) is less than 20 Oe, and H_(K)is less than 30 Oe.
 40. The method of claim 33 further comprised ofapplying an external magnetic field to magnetically align said top polelayer.
 41. The method of claim 37 further comprised of removing portionsof said second seed layer and write gap layer, and a top portion of saidbottom pole layer that are not covered by said top pole layer anddepositing an overcoat dielectric layer on said top pole layer andbottom pole layer.
 42. The method of claim 33 wherein forming said toppole layer is accomplished by an electroplating process which iscomprised of immersing said substrate in an electrolyte solutioncontained within an electroplating cell that has a Co or Ni anode. 43.The method of claim 42 wherein said electrolyte solution is comprisedof: (a) an aqueous solution of metal salts comprising: FeSO₄.7H₂O at aconcentration of 30 to 70 g/L; CoSO₄.7H₂O at a concentration of about10-40 g/L; NiSO₄.6H₂O at a concentration of 0 to about 40 g/L;NiCl₂.6H₂O at a concentration of 0 to about 10 g/L; and VOSO₄.xH₂O at aconcentration of about 0.02 to 10 g/L; (b) H₃BO₃ at a concentration ofabout 26 to 27 g/L; (c) NH₄Cl at a concentration of 0 to 20 g/L; (d)(NH₄)₂SO₄ at a concentration of 0 to 30 g/L; (e) sodium saccharin at aconcentration of 0 to 2.0 g/L; and (f) sodium lauryl sulfate at aconcentration of 0.01 to 0.15 g/L.
 44. The method of claim 43 whereinsaid electrolyte solution has a pH of between about 2.0 and 4.0 and ismaintained at a temperature between about 10° C. and 40° C.
 45. Themethod of claim 42 wherein a plating current with a density of about 3to 30 mA/cm² is applied to said electroplating cell during theelectroplating process.
 46. The method of claim 42 wherein an externalmagnetic field of about 2000 Oe is applied to magnetically align saidtop pole layer during said electroplating process.
 47. The method ofclaim 42 wherein said electroplating process is performed with a pulseddirect current having a cycle time of 0.1 seconds and a duty ratio of 40to 60%.